SSM3J133TU 2010-11-30 1 toshiba field effect transistor silicon p-chan nel mos type (u-mos ) SSM3J133TU power management switch applications ? 1.5v drive ? low on-resistance: r ds(on) = 88.4 m (max) (@v gs = -1.5 v) r ds(on) = 56.0 m (max) (@v gs = -1.8 v) r ds(on) = 39.7 m (max) (@v gs = -2.5 v) r ds(on) = 29.8 m (max) (@v gs = -4.5 v) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss -20 v gate-source voltage v gss 8 v dc i d (note1) -5.5 drain current pulse i dp (note1) -11.0 a p d (note2) 500 power dissipation t<1s 1000 mw channel temperature t ch 150 c storage temperature range t stg ?55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause th is product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note1: the channel temperature should not exceed 150 c during use. note2: mounted on fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 645 mm 2 ) marking equivalent circuit (top view) unit: mm jedec D jeita D toshiba 2-2u1a weight: 6.6 mg (typ.) ufm jjl 1 2 3 1 2 3 -0.05 1.70.1 2.10.1 0.650.05 1 2 2.00.1 3 0.70.05 +0.1 0.3 0.1660.05 1: gate 2: source 3: drain free datasheet http:///
SSM3J133TU 2010-11-30 2 electrical characteristics (ta = 25c) characteristics symbol test conditions min typ. max unit v (br) dss i d = -1 ma, v gs = 0 v -20 ? ? v drain-source breakdown voltage v (br) dsx i d = -1 ma, v gs = 5 v . (note 4) -15 ? ? v drain cut-off current i dss v ds = -20 v, v gs = 0 v ? ? -1 a gate leakage current i gss v gs = 8 v, v ds = 0 v ? ? 1 a gate threshold voltage v th v ds = -3 v, i d = -1 ma -0.3 ? -1.0 v forward transfer admittance ? y fs ? v ds = -3 v, i d = -1.0 a (note 3) 5.2 10.4 ? s i d = -3.0 a, v gs = -4.5 v (note 3) ? 24.9 29.8 i d = -2.5 a, v gs = -2.5 v (note 3) ? 31.1 39.7 i d = -1.5 a, v gs = -1.8 v (note 3) ? 38.8 56.0 drain-source on-resistance r ds (on) i d = -0.5 a, v gs = -1.5 v (note 3) ? 47.4 88.4 m input capacitance c iss ? 840 ? output capacitance c oss ? 118 ? reverse transfer capacitance c rss v ds = -10 v, v gs = 0 v f = 1 mhz ? 99 ? pf turn-on time t on ? 32 ? switching time turn-off time t off v dd = -10 v, i d = -2.0 a v gs = 0 to -2.5 v, r g = 4.7 ? 107 ? ns total gate charge q g ? 12.8 ? gate-source charge q gs1 ? 1.4 ? gate-drain charge q gd v dd = -10 v, i d = -4.0 a, v gs = -4.5 v ? 3.0 ? nc drain-source forward voltage v dsf i d = 5.5a, v gs = 0 v (note3) ? 0.83 1.2 v note 3: pulse test note 4: if a forward bias is applied between gate and source, this device enters v (br)dsx mode. note that the drain-source breakdown voltage is lowered in this mode. switching time test circuit (a) test circuit notice on usage let v th be the voltage applied between gate and s ource that causes the drain current (i d ) to be low (-1 ma for the SSM3J133TU). then, for normal switching operation, v gs(on) must be higher than v th, and v gs(off) must be lower than v th. this relationship can be expressed as: v gs(off) < v th < v gs(on) . take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. thermal resistance r th (ch-a) and power dissipation p d vary depending on board material, board area, board thickness and pad area. when using this device, please ta ke heat dissipation into consideration. v dd = -10 v r g = 4.7 duty 1% v in : t r , t f < 5 ns common source ta = 25c in 0 ? 2.5v 10 s v dd out r g r l t on 10% 90% ?2.5 v 0 v 90% 10% t off t r t f v ds ( on ) v dd (b) v in (c) v out
SSM3J133TU 2010-11-30 3 0 -2 -4 -6 gate-source voltage v gs (v) 0 r ds (on) ? v gs -8 60 ? 25 c 25 c 140 ta = 100 c 120 80 40 20 i d = -0.5 a common source pulse test 100 gate-source voltage v gs (v) i d ? v gs drain current i d (a) -100 -0.0001 0 -1 -10 -0.01 -0.1 -0.001 -2.0 ? 25 c common source v ds = -3 v pulse test ta = 100 c 25 c -0.5 -1.5 -1.0 r ds (on) ? ta 120 0 ? 50 i d = -0.5 a / v gs = -1.5 v 0 50 150 20 40 60 80 100 -2.5 a / -2.5 v -3.0 a / -4.5 v -1.5 a / -1.8 v 140 drain-source voltage v ds (v) i d ? v ds drain current i d (a) 0 -10 0 -0.2 -0.6 -0.8 -1 -6 -2 -4 common source ta = 25 c pulse test -1.8 v -2.5 v -0.4 v gs = -4.5 v -8 r ds (on) ? v gs gate-source voltage v gs (v) r ds (on) ? i d -1.5 v 0 -2 -4 -6 0 -8 60 ? 25 c 140 ta = 100 c 120 80 40 20 i d = -2.5 a common source pulse test 100 -8.0 0 -2.0 -4.0 0 -6.0 140 v gs = - 1.5 v -2.5 v -1.8 v 120 100 80 40 20 60 -4.5 v -10.0 common source pulse test 100 common source ta = 25c pulse test 25 c drain?source on-resistance r ds (on) (m ? ) drain?source on-resistance r ds (on) (m ? ) drain?source on-resistance r ds (on) (m ? ) drain?source on-resistance r ds (on) (m ? ) drain current i d (a) ambient temperature ta (c)
SSM3J133TU 2010-11-30 4 |y fs | ? i d 0.1 -100 1.0 10 100 -0.1 -1 -10 30 0.3 3.0 c ? v ds 0 0 -2 10 20 -8 -6 -4 30 common source i d = -4.0 a ta = 25 c v th ? ta -0.8 0 ? 50 0 150 -0.2 -0.4 -0.6 -1.0 50 100 v dd = -10 v v dd = -16 v t ? i d i dr ? v ds 100 0 1 10 0.01 0.1 0.001 0.2 0.6 0.4 1.0 0.8 1.2 common source v gs = 0 v ta = 2 5 c pulse test g d s i dr 100 c 25 c ? 25 c common source v ds = -3 v ta = 25 c pulse test -0.01 common source v ds = -3 v i d = -1 ma 10 -0.1 -1 -10 -100 1000 10000 3000 5000 300 500 100 50 30 c iss c rss c oss common source ta = 25 c f = 1 mhz v gs = 0 v 1 -0.001 1000 -0.1 10000 -1 -10 100 t f common source v dd = -10 v v gs = 0 to -2.5 v ta = 25 c r g = 4.7 10 -0.01 t off t r t on ambient temperature ta (c) gate threshold voltage v th (v) drain current i d (a) forward transfer admittance ? y fs ? (s) drain?source voltage v ds (v) capacitance c (pf) total gate charge qg (nc) gate?source voltage v gs (v) dynamic input characteristic drain current i d (a) switching time t (ns) drain reverse current i dr (a) drain?source voltage v ds (v)
SSM3J133TU 2010-11-30 5 transient thermal impedance rth (c/w) pulse width t w (s) r th ? t w 0.001 0.01 0.1 600 1 10 100 1 100 600 10 b a single pulse a: mounted on fr4 board (25.4mm 25.4mm 1.6mm , cu pad : 645 mm 2 ) b: mounted on fr4 board (25.4mm 25.4mm 1.6mm , cu pad : 0.36 mm 2 3) ambient temperature ta (c) p d ? t a power dissipation p d (mw) 800 0 200 120 100 140 400 600 160 1000 80 60 40 20 0 -20 -40 mounted on fr4 board (25.4mm 25.4mm 1.6mm , cu pad : 645 mm 2 )
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